• DocumentCode
    1152634
  • Title

    MBE-grown (GaIn)P/GaAs heterojunction bipolar transistors exhibiting current gains up to 200

  • Author

    Rockett, P.I. ; Pate, M.A. ; Claxton, P.A.

  • Author_Institution
    Dept. of Electron. & Electr. Eng., Sheffield Univ., UK
  • Volume
    37
  • Issue
    3
  • fYear
    1990
  • fDate
    3/1/1990 12:00:00 AM
  • Firstpage
    810
  • Lastpage
    811
  • Abstract
    Lattice-matched Ga0.51In0.49P-GaAs heterojunction bipolar transistors grown by solid-source molecular-beam epitaxy that exhibit small-signal current gains as high as 200 are discussed. This result demonstrates the feasibility of using (InGa)P as an alternative to (AlGa)As in GaAs-based devices
  • Keywords
    III-V semiconductors; gallium arsenide; heterojunction bipolar transistors; indium compounds; molecular beam epitaxial growth; (InGa)P; Ga0.51In0.49P-GaAs; HBT; III-V semiconductors; MBE-grown; heterojunction bipolar transistors; lattice matched interface; small-signal current gains; solid-source molecular-beam epitaxy; Bipolar transistors; Epitaxial layers; Etching; Gain measurement; Gallium arsenide; Heterojunction bipolar transistors; Indium gallium arsenide; Molecular beam epitaxial growth; Substrates; Voltage;
  • fLanguage
    English
  • Journal_Title
    Electron Devices, IEEE Transactions on
  • Publisher
    ieee
  • ISSN
    0018-9383
  • Type

    jour

  • DOI
    10.1109/16.47792
  • Filename
    47792
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=1152634