• DocumentCode
    1152638
  • Title

    Modal analysis and engineering on InP-based two-dimensional photonic-crystal microlasers on a Si wafer

  • Author

    Monat, Christelle ; Seassal, Christian ; Letartre, Xavier ; Regreny, Philippe ; Rojo-Romeo, Pedro ; Viktorovitch, Pierre ; d´Yerville, M.L.V. ; Cassagne, David ; Albert, J.P. ; Jalaguier, Eric ; Pocas, Stéphane ; Aspar, Bernard

  • Author_Institution
    Lab. d´´Electronique, Optoelectronique et Microsystemes, Ecole Centrale de Lyon, Ecully, France
  • Volume
    39
  • Issue
    3
  • fYear
    2003
  • fDate
    3/1/2003 12:00:00 AM
  • Firstpage
    419
  • Lastpage
    425
  • Abstract
    We report results on hexagonal-shaped microlasers formed from two-dimensional photonic crystals (PCs) using InP-based materials transferred and bonded onto SiO2/ Si wafers. Two types of hexagonal cavities are investigated : single defect (one hole missing) cavities, so-called H1 cavities (1 μm in diameter) and two holes missing per side H2 cavities (2 μm in diameter). Their optical properties are analyzed using photoluminescence experiments, and plane wave method simulations have been performed for comparison. High Q modes (∼600/700) have been measured and they have been shown to enable laser effect at room temperature, under pulsed optical pumping (15% duty cycle and 25-ns pulsewidth). The study of these efficient mode characteristics gives guidance for further improvement of the operation conditions of PC lasers, such as the reduction of the threshold pumping power.
  • Keywords
    III-V semiconductors; indium compounds; laser modes; microcavity lasers; optical pumping; photoluminescence; photonic crystals; quantum well lasers; 1 micron; 2 micron; 25 ns; H1 cavities; H2 cavities; InAs0.65P0.35-InP; InP; InP barrier material; InP-based two-dimensional photonic-crystal microlasers; MQW; Si; Si wafer; SiO2-Si; SiO2/ Si wafers; efficient mode characteristics; hexagonal cavities; hexagonal-shaped microlasers; high Q modes; laser effect; modal analysis; operation conditions; optical properties; photoluminescence; plane wave method simulations; pulsed optical pumping; quantum-confined active layer; room temperature; single defect cavities; strained InAs0.65P0.35 quantum wells; threshold pumping power; Crystalline materials; Laser modes; Modal analysis; Optical materials; Optical pulses; Optical pumping; Personal communication networks; Photonic crystals; Pulse measurements; Pump lasers;
  • fLanguage
    English
  • Journal_Title
    Quantum Electronics, IEEE Journal of
  • Publisher
    ieee
  • ISSN
    0018-9197
  • Type

    jour

  • DOI
    10.1109/JQE.2002.808182
  • Filename
    1181521