DocumentCode
1152638
Title
Modal analysis and engineering on InP-based two-dimensional photonic-crystal microlasers on a Si wafer
Author
Monat, Christelle ; Seassal, Christian ; Letartre, Xavier ; Regreny, Philippe ; Rojo-Romeo, Pedro ; Viktorovitch, Pierre ; d´Yerville, M.L.V. ; Cassagne, David ; Albert, J.P. ; Jalaguier, Eric ; Pocas, Stéphane ; Aspar, Bernard
Author_Institution
Lab. d´´Electronique, Optoelectronique et Microsystemes, Ecole Centrale de Lyon, Ecully, France
Volume
39
Issue
3
fYear
2003
fDate
3/1/2003 12:00:00 AM
Firstpage
419
Lastpage
425
Abstract
We report results on hexagonal-shaped microlasers formed from two-dimensional photonic crystals (PCs) using InP-based materials transferred and bonded onto SiO2/ Si wafers. Two types of hexagonal cavities are investigated : single defect (one hole missing) cavities, so-called H1 cavities (1 μm in diameter) and two holes missing per side H2 cavities (2 μm in diameter). Their optical properties are analyzed using photoluminescence experiments, and plane wave method simulations have been performed for comparison. High Q modes (∼600/700) have been measured and they have been shown to enable laser effect at room temperature, under pulsed optical pumping (15% duty cycle and 25-ns pulsewidth). The study of these efficient mode characteristics gives guidance for further improvement of the operation conditions of PC lasers, such as the reduction of the threshold pumping power.
Keywords
III-V semiconductors; indium compounds; laser modes; microcavity lasers; optical pumping; photoluminescence; photonic crystals; quantum well lasers; 1 micron; 2 micron; 25 ns; H1 cavities; H2 cavities; InAs0.65P0.35-InP; InP; InP barrier material; InP-based two-dimensional photonic-crystal microlasers; MQW; Si; Si wafer; SiO2-Si; SiO2/ Si wafers; efficient mode characteristics; hexagonal cavities; hexagonal-shaped microlasers; high Q modes; laser effect; modal analysis; operation conditions; optical properties; photoluminescence; plane wave method simulations; pulsed optical pumping; quantum-confined active layer; room temperature; single defect cavities; strained InAs0.65P0.35 quantum wells; threshold pumping power; Crystalline materials; Laser modes; Modal analysis; Optical materials; Optical pulses; Optical pumping; Personal communication networks; Photonic crystals; Pulse measurements; Pump lasers;
fLanguage
English
Journal_Title
Quantum Electronics, IEEE Journal of
Publisher
ieee
ISSN
0018-9197
Type
jour
DOI
10.1109/JQE.2002.808182
Filename
1181521
Link To Document