Poisson modeling of ultraconfined AlGaAs-GaAs semiconductor devices with selective doping

Author

Bigelow, J.M. ; Leburton, J.P. ; Klejwa, M. ; Adesida, I.

Author_Institution

Dept. of Electr. & Comput. Eng., Illinois Univ., Urbana, IL, USA

Volume

37

Issue

3

fYear

1990

fDate

3/1/1990 12:00:00 AM

Firstpage

821

Lastpage

823

Abstract

An ultraconfined compound semiconductor device is investigated by using a two-dimensional iterative Poisson solver (TIPS). The device confines electrons into one-dimensional channels through the use of selective doping. The electron confinement is found to be a sensitive function of gate width and implant dose of the selective doping, and it is limited by the lateral straggle of the implantation

Keywords

III-V semiconductors; aluminium compounds; gallium arsenide; high electron mobility transistors; semiconductor device models; semiconductor doping; AlGaAs-GaAs; HEMT; III-V semiconductors; MODFET; Poisson modeling; electron confinement; gate width; implant dose; implantation lateral straggle; one-dimensional channels; selective doping; two-dimensional iterative Poisson solver; ultraconfined compound semiconductor device; Carrier confinement; Electrons; Epitaxial layers; Gallium arsenide; Heterojunctions; Implants; Semiconductor device doping; Semiconductor devices; Semiconductor process modeling; Silicon;

fLanguage

English

Journal_Title

Electron Devices, IEEE Transactions on

Publisher

ieee

ISSN

0018-9383

Type

jour

DOI

10.1109/16.47797

Filename

47797