Title :
Comments on "Determination of Si-SiO/sub 2/ interface trap density by 1/f noise measurements" [with reply]
Author :
Vuillaume, Dominique ; Celik-Butler, Zeynep ; Hsiang, T.Y.
Author_Institution :
Lab. de Phys. des Solides, Inst. Superieure d´Electron. du Nord, Lille, France
fDate :
3/1/1990 12:00:00 AM
Abstract :
For the original article see ibid., vol.35, p.1651-5 (1988). The author comments on the interface state density determined by means of measurements of the 1/f noise at cryogenic temperatures. A suspiciously high density (10/sup 23/ cm/sup -3/ eV/sup -1/) was recently determined by Z. Celik-Butler and T.Y. Hsiang in the above-mentioned paper. It is argued that this value is contradictory to a determination by other techniques such as deep-level transient spectroscopy (DLTS) that are more specifically devoted to the study of defects in devices. A detailed reply by Celik-Butler and Hsiang is included.<>
Keywords :
electric noise measurement; electron traps; electronic density of states; elemental semiconductors; interface electron states; random noise; semiconductor-insulator boundaries; silicon; silicon compounds; 1/f noise measurements; Si-SiO/sub 2/; cryogenic temperatures; interface state density; interface trap density; semiconductors; Cryogenics; Density measurement; Interface states; MOSFET circuits; Noise measurement; Semiconductor device noise; Silicon; Spectroscopy; Temperature; Tunneling;
Journal_Title :
Electron Devices, IEEE Transactions on
