Comments on "Determination of Si-SiO/sub 2/ interface trap density by 1/f noise measurements" [with reply]

Author

Vuillaume, Dominique ; Celik-Butler, Zeynep ; Hsiang, T.Y.

Author_Institution

Lab. de Phys. des Solides, Inst. Superieure d´Electron. du Nord, Lille, France

Volume

37

Issue

3

fYear

1990

fDate

3/1/1990 12:00:00 AM

Firstpage

824

Lastpage

826

Abstract

For the original article see ibid., vol.35, p.1651-5 (1988). The author comments on the interface state density determined by means of measurements of the 1/f noise at cryogenic temperatures. A suspiciously high density (10/sup 23/ cm/sup -3/ eV/sup -1/) was recently determined by Z. Celik-Butler and T.Y. Hsiang in the above-mentioned paper. It is argued that this value is contradictory to a determination by other techniques such as deep-level transient spectroscopy (DLTS) that are more specifically devoted to the study of defects in devices. A detailed reply by Celik-Butler and Hsiang is included.<>

Keywords

electric noise measurement; electron traps; electronic density of states; elemental semiconductors; interface electron states; random noise; semiconductor-insulator boundaries; silicon; silicon compounds; 1/f noise measurements; Si-SiO/sub 2/; cryogenic temperatures; interface state density; interface trap density; semiconductors; Cryogenics; Density measurement; Interface states; MOSFET circuits; Noise measurement; Semiconductor device noise; Silicon; Spectroscopy; Temperature; Tunneling;

fLanguage

English

Journal_Title

Electron Devices, IEEE Transactions on

Publisher

ieee

ISSN

0018-9383

Type

jour

DOI

10.1109/16.47798

Filename

47798