Title :
Saturation properties of large-aperture photoconducting antennas
Author :
Darrow, Justin T. ; Zhang, Xi-Cheng ; Auston, David H. ; Morse, Jeffrey D.
Author_Institution :
Dept. of Electr. Eng., Columbia Univ., New York, NY, USA
fDate :
6/1/1992 12:00:00 AM
Abstract :
The authors describe the saturation properties of ultrafast pulsed electromagnetic radiation generated by large-aperture photoconducting antennas as a function of optical excitation fluence. A theory that predicts this effect is presented. The amplitude saturation of the radiation has been observed form antennas incorporating GaAs, InP, and radiation damaged silicon-on-sapphire consistent with theoretical expectations. The radiated fields were measured directly with a time resolution of 0.6 ps with the use of a large-aperture antennas as a detector. From these experimental studies, information about the high-speed response (i.e., the transient carrier mobility in the first few picoseconds after optical excitation) of the photoconductors incorporated in the antenna can be obtained under conditions of high applied electric fields and optical fluences
Keywords :
antenna theory; antennas; photoconducting devices; Al2O3; GaAs; InP; Si; amplitude saturation; applied electric fields; high-speed response; large-aperture photoconducting antennas; optical excitation fluence; radiated fields; radiation damaged Si on sapphire; saturation properties; semiconductor; theoretical expectations; time resolution; transient carrier mobility; ultrafast pulsed electromagnetic radiation; Antenna theory; EMP radiation effects; Electromagnetic radiation; Gallium arsenide; High speed optical techniques; Indium phosphide; Optical pulse generation; Optical saturation; Photoconductivity; Ultrafast optics;
Journal_Title :
Quantum Electronics, IEEE Journal of