DocumentCode
1152744
Title
Saturation properties of large-aperture photoconducting antennas
Author
Darrow, Justin T. ; Zhang, Xi-Cheng ; Auston, David H. ; Morse, Jeffrey D.
Author_Institution
Dept. of Electr. Eng., Columbia Univ., New York, NY, USA
Volume
28
Issue
6
fYear
1992
fDate
6/1/1992 12:00:00 AM
Firstpage
1607
Lastpage
1616
Abstract
The authors describe the saturation properties of ultrafast pulsed electromagnetic radiation generated by large-aperture photoconducting antennas as a function of optical excitation fluence. A theory that predicts this effect is presented. The amplitude saturation of the radiation has been observed form antennas incorporating GaAs, InP, and radiation damaged silicon-on-sapphire consistent with theoretical expectations. The radiated fields were measured directly with a time resolution of 0.6 ps with the use of a large-aperture antennas as a detector. From these experimental studies, information about the high-speed response (i.e., the transient carrier mobility in the first few picoseconds after optical excitation) of the photoconductors incorporated in the antenna can be obtained under conditions of high applied electric fields and optical fluences
Keywords
antenna theory; antennas; photoconducting devices; Al2O3; GaAs; InP; Si; amplitude saturation; applied electric fields; high-speed response; large-aperture photoconducting antennas; optical excitation fluence; radiated fields; radiation damaged Si on sapphire; saturation properties; semiconductor; theoretical expectations; time resolution; transient carrier mobility; ultrafast pulsed electromagnetic radiation; Antenna theory; EMP radiation effects; Electromagnetic radiation; Gallium arsenide; High speed optical techniques; Indium phosphide; Optical pulse generation; Optical saturation; Photoconductivity; Ultrafast optics;
fLanguage
English
Journal_Title
Quantum Electronics, IEEE Journal of
Publisher
ieee
ISSN
0018-9197
Type
jour
DOI
10.1109/3.135314
Filename
135314
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