DocumentCode :
1152785
Title :
Pressure-tuned GaAs diode-laser absorption spectrocopy of xenon hyperfine structure
Author :
Pine, Alan S. ; Glassbrenner, Charles J. ; Kafalas, J.A.
Author_Institution :
MIT Lincoln Laboratory, Lexington, MA, USA
Volume :
9
Issue :
8
fYear :
1973
fDate :
8/1/1973 12:00:00 AM
Firstpage :
800
Lastpage :
807
Abstract :
The high-resolution and broad tuning-range capabilities of semiconductor lasers under hydrostatic pressure are demonstrated. GaAs diode lasers operating under pulsed chirped mode conditions at 77 K are used to obtain Doppler-limited absorption spectra of several 
transitions in xenon atoms excited in a hollow-cathode discharge. The hyperfine structure so obtained is in agreement with previous spectral studies of xenon isotopes using conventional emission interferometric and RF beam techniques.
transitions in xenon atoms excited in a hollow-cathode discharge. The hyperfine structure so obtained is in agreement with previous spectral studies of xenon isotopes using conventional emission interferometric and RF beam techniques.Keywords :
Absorption; Diode lasers; Gallium arsenide; Laser modes; Laser transitions; Laser tuning; Optical pulses; Semiconductor diodes; Semiconductor lasers; Xenon;
fLanguage :
English
Journal_Title :
Quantum Electronics, IEEE Journal of
Publisher :
ieee
ISSN :
0018-9197
Type :
jour
DOI :
10.1109/JQE.1973.1077753
Filename :
1077753
Link To Document :
