• DocumentCode
    1152785
  • Title

    Pressure-tuned GaAs diode-laser absorption spectrocopy of xenon hyperfine structure

  • Author

    Pine, Alan S. ; Glassbrenner, Charles J. ; Kafalas, J.A.

  • Author_Institution
    MIT Lincoln Laboratory, Lexington, MA, USA
  • Volume
    9
  • Issue
    8
  • fYear
    1973
  • fDate
    8/1/1973 12:00:00 AM
  • Firstpage
    800
  • Lastpage
    807
  • Abstract
    The high-resolution and broad tuning-range capabilities of semiconductor lasers under hydrostatic pressure are demonstrated. GaAs diode lasers operating under pulsed chirped mode conditions at 77 K are used to obtain Doppler-limited absorption spectra of several 6s \\rightarrow 6p transitions in xenon atoms excited in a hollow-cathode discharge. The hyperfine structure so obtained is in agreement with previous spectral studies of xenon isotopes using conventional emission interferometric and RF beam techniques.
  • Keywords
    Absorption; Diode lasers; Gallium arsenide; Laser modes; Laser transitions; Laser tuning; Optical pulses; Semiconductor diodes; Semiconductor lasers; Xenon;
  • fLanguage
    English
  • Journal_Title
    Quantum Electronics, IEEE Journal of
  • Publisher
    ieee
  • ISSN
    0018-9197
  • Type

    jour

  • DOI
    10.1109/JQE.1973.1077753
  • Filename
    1077753
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=1152785