DocumentCode :
1152868
Title :
Semiclassical Modeling of Quasi-Ballistic Hole Transport in Nanoscale pMOSFETs Based on a Multi-Subband Monte Carlo Approach
Author :
De Michielis, Marco ; Esseni, David ; Palestri, Pierpaolo ; Selmi, Luca
Author_Institution :
Dept. of Electr., Mech. & Manage. Eng., Univ. of Udine, Udine, Italy
Volume :
56
Issue :
9
fYear :
2009
Firstpage :
2081
Lastpage :
2091
Abstract :
This paper presents a new self-consistent multi-subband Monte Carlo (MSMC) simulator designed to investigate quasi-ballistic transport in nanoscale pMOSFETs. The simulator is 2-D in real space and k-space, and an accurate analytical model of the warped hole energy dispersion is adopted. The effects of the hole gas degeneracy are naturally included by accounting for the Pauli´s exclusion principle. The simulator is implemented by resorting to original solutions for handling the hole-free flights consistently with the complicated energy dispersion. A detail description of the formulation of the scattering rates used in the simulator and a comparison to calculations based on a k middot p quantization model are given. Upon an appropriate calibration, the new MSMC tool can accurately reproduce the experimental data for low field mobility, and it can be used for the analysis of the semiballistic transport regime in nanoscale pMOSFETs. Preliminary results for the ballistic ratios BR in double-gate silicon-on-insulator pMOSFETs show that the BR in pMOS are not much worse than in nMOS transistors.
Keywords :
MOSFET; Monte Carlo methods; nanoelectronics; silicon-on-insulator; Pauli´s exclusion principle; complicated energy dispersion; double-gate silicon-on-insulator pMOSFET; hole gas degeneracy; hole-free flight handling; k middot p quantization model; multisubband Monte Carlo simulator; nanoscale pMOSFET; quasiballistic hole transport; semiballistic transport regime; semiclassical modeling; warped hole energy dispersion; Aerospace simulation; Analytical models; Anisotropic magnetoresistance; Calibration; Computational modeling; Electrostatics; MOSFETs; Monte Carlo methods; Quantization; Scattering; Silicon on insulator technology; Hole inversion layer; multi-subband Monte Carlo; p-MOSFETs; quasi-ballistic hole transport; semi-classical modelling;
fLanguage :
English
Journal_Title :
Electron Devices, IEEE Transactions on
Publisher :
ieee
ISSN :
0018-9383
Type :
jour
DOI :
10.1109/TED.2009.2026388
Filename :
5175418
Link To Document :
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