Title :
Row/Column Replacement for the Control of Hard Defects in Semiconductor RAM´s
Author :
Fuja, Tom ; Heegard, Chris
Author_Institution :
School of Electrical Engineering, Cornell University
Abstract :
We describe and analyze row/column replacement, the technique currently used to control hard cell defects in semiconductor RAM´s during manufacture. This strategy is shown to be asymptotically ineffective; it is demonstrated that this ineffectiveness may become a limiting issue for very large memory arrays.
Keywords :
Error-control coding; RAM´s; hard defects; redundancy; reliability; row/column replacement; yield improvement; Manufacturing; Random access memory; Read-write memory; Redundancy; Scholarships; Semiconductor device manufacture; Semiconductor materials; Switches; Error-control coding; RAM´s; hard defects; redundancy; reliability; row/column replacement; yield improvement;
Journal_Title :
Computers, IEEE Transactions on
DOI :
10.1109/TC.1986.1676701
