DocumentCode :
1152952
Title :
Improved Performance of AlGaInP LEDs by a Periodic GaP-Dish Mirror Array
Author :
Huang, Ping-Wei ; Wu, Yew Chung Sermon
Author_Institution :
Mater. Sci. & Eng. Dept., Nat. Chiao Tung Univ., Hsinchu, Taiwan
Volume :
21
Issue :
19
fYear :
2009
Firstpage :
1441
Lastpage :
1443
Abstract :
A periodic GaP-dish mirror structure was introduced into AlGaInP light-emitting diodes (LEDs) through wet etching and Si wafer bonding process. It was found that the performance of these GaP-dish LEDs was better than that of conventional LED transferred to Si substrate (LED-C). In addition, the output power of GaP-dish LEDs was increased with the decrease of GaP-dish diameter. When the GaP-dish diameter decreased to 3 mum, the output power reached 2.2 mW, which was two times higher than that of LED-C.
Keywords :
aluminium compounds; elemental semiconductors; etching; gallium compounds; indium compounds; light emitting diodes; mirrors; silicon; wafer bonding; AlGaInP; GaP; LED-C; Si; dish mirror array; light-emitting diodes; power 2.2 mW; size 3 mum; wafer bonding process; wet etching; AlGaInP; dish; light-emitting diode (LED); mirror;
fLanguage :
English
Journal_Title :
Photonics Technology Letters, IEEE
Publisher :
ieee
ISSN :
1041-1135
Type :
jour
DOI :
10.1109/LPT.2009.2028238
Filename :
5175427
Link To Document :
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