Near-IR Optical Upconverter With Integrated Heterojunction Phototransistor and Organic Light-Emitting Diode

Author

Chen, Jun ; Ban, Dayan ; Helander, Michael G. ; Lu, Zhenghong ; Graf, Marcel ; Poole, Philip ; Liu, H.C.

Author_Institution

Dept. of Electr. & Comput. Eng., Univ. of Waterloo, Waterloo, ON, Canada

Volume

21

Issue

19

fYear

2009

Firstpage

1447

Lastpage

1449

Abstract

In this letter, we report a near-infrared (NIR) optical upconverter consisting of an integrated InGaAs-InP heterojunction phototransistor (HPT) with an organic light-emitting diode (OLED), which converts 1.5-mum IR light to visible light with a built-in electrical gain. The device was fabricated through direct tandem integration of an OLED with an inorganic InGaAs-InP HPT. Incoming 1.5-mum optical radiation is absorbed by the HPT, generating an amplified photocurrent. The resultant photocurrent drives the OLED that emits at 545 nm. Upconversion is demonstrated at room temperature with a gain of 15 from the HPT and an overall external upconversion efficiency of 0.15 W/W.

Keywords

III-V semiconductors; gallium arsenide; indium compounds; optical wavelength conversion; organic light emitting diodes; phototransistors; IR light; InGaAs-InP; OLED; electrical gain; heterojunction phototransistor; near-IR optical upconverter; optical radiation; organic light-emitting diode; photocurrent; visible light; wavelength 1.5 mum; wavelength 545 nm; Infrared (IR) detectors; optical frequency conversion; optoelectronic devices; organic light-emitting diodes (OLEDs);

fLanguage

English

Journal_Title

Photonics Technology Letters, IEEE

Publisher

ieee

ISSN

1041-1135

Type

jour

DOI

10.1109/LPT.2009.2028241

Filename

5175428