DocumentCode
1153189
Title
/Ti/Al Metal–Insulator–Metal Capacitors With Subnanometer CET Using ALD-Deposited  is deposited by ALD using the new zirconium precursor ZrD-04, also known as Bis(methylcyclopentadienyl) methoxymethyl. Measured capacitance-voltage (<i>C</i>-<i>V</i>) and current-voltage (<i>I</i>-<i>V</i>) characteristics are reported for premetallization rapid thermal annealing (RTP) in N<sub>2</sub> for 60 s at 400degC, 500degC, or 600degC. For the RTP at 400degC, we find very low leakage current densities on the order of nanoamperes per square centimeter at a gate voltage of 1 V and low capacitance equivalent thickness values of ~ 0.9 nm at a gate voltage of 0 V. The dielectric constant of ZrO<sub>2</sub> is 31 plusmn 2 after RTP treatment at 400degC.</div></div>
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<div class='row g-0 align-items-center mb-2'><div class='col-12 col-md-3 fullRecLabelEnglish fw-bold mb-2 mb-md-0'><span class='text-muted small'>Keywords</span></div><div class='col-12 col-md-9 leftDirection leftAlign'>DRAM chips; MIM devices; aluminium; atomic layer deposition; leakage currents; nitrogen; permittivity; rapid thermal annealing; titanium compounds; zirconium compounds; Bis(methylcyclopentadienyl) methoxymethyl; DRAM chips; N<sub>2</sub>; TiN-ZrO<sub>2</sub>-Ti-Al; dielectric constant; leakage current density; metal-insulator-metal capacitors; rapid thermal annealing; size 7 nm to 8 nm; temperature 400 degC to 600 degC; voltage 1 V; <formula formulatype=)
$hbox{ZrO}_{2}$ ; ALD; ZrD-04; capacitor; dynamic random access memory (DRAM); effective dielectric constant; gate oxide; high- $k$
fLanguage
English
Journal_Title
Electron Device Letters, IEEE
Publisher
ieee
ISSN
0741-3106
Type
jour
DOI
10.1109/LED.2008.2012356
Filename
4781544
Link To Document