DocumentCode :
1153189
Title :
 is deposited by ALD using the new zirconium precursor ZrD-04, also known as Bis(methylcyclopentadienyl) methoxymethyl. Measured capacitance-voltage (<i>C</i>-<i>V</i>) and current-voltage (<i>I</i>-<i>V</i>) characteristics are reported for premetallization rapid thermal annealing (RTP) in N<sub>2</sub> for 60 s at 400degC, 500degC, or 600degC. For the RTP at 400degC, we find very low leakage current densities on the order of nanoamperes per square centimeter at a gate voltage of 1 V and low capacitance equivalent thickness values of ~ 0.9 nm at a gate voltage of 0 V. The dielectric constant of ZrO<sub>2</sub> is 31 plusmn 2 after RTP treatment at 400degC.</div>
</div>
<div class='row'>
<div class='leftDiv labelDiv col-xs-4 col-sm-2 fullRecLabelEnglish'>Keywords : </div><div class='valueDiv leftDirection leftAlign col-xs-8 col-sm-10 fullRecValueEnglish'>DRAM chips; MIM devices; aluminium; atomic layer deposition; leakage currents; nitrogen; permittivity; rapid thermal annealing; titanium compounds; zirconium compounds; Bis(methylcyclopentadienyl) methoxymethyl; DRAM chips; N<sub>2</sub>; TiN-ZrO<sub>2</sub>-Ti-Al; dielectric constant; leakage current density; metal-insulator-metal capacitors; rapid thermal annealing; size 7 nm to 8 nm; temperature 400 degC to 600 degC; voltage 1 V; <formula formulatype=)
fLanguage :
English
Journal_Title :
Electron Device Letters, IEEE
Publisher :
ieee
ISSN :
0741-3106
Type :
jour
DOI :
10.1109/LED.2008.2012356
Filename :
4781544
Link To Document :
