• DocumentCode
    1153421
  • Title

    The effects of drift and diffusion in semiconductors on plane wave interaction at interfaces

  • Author

    Davis, William A. ; Krowne, Clifford M.

  • Author_Institution
    Dept. of Electr. Eng., Virginia Polytech. Inst. & State Univ., Blacksburg, VA, USA
  • Volume
    36
  • Issue
    1
  • fYear
    1988
  • fDate
    1/1/1988 12:00:00 AM
  • Firstpage
    97
  • Lastpage
    103
  • Abstract
    The field solution for a semiconductor material is presented in terms of gradient and curl components based on a drift-diffusion model. This is done for both biased and unbiased semiconductors where the bias causes a drift current. A simple demonstration of the field representation is given for plane-wave scattering at a dielectric-semiconductor interface when the incident field used is either TMz or TEz
  • Keywords
    carrier mobility; semiconductor device models; semiconductors; biased semiconductors; dielectric-semiconductor interface; drift-diffusion model; field solution; plane wave interaction; plane-wave scattering; unbiased semiconductors; Boundary conditions; Charge carrier processes; Conductivity; Dielectrics; Equations; Light scattering; Microstrip; Optical propagation; Semiconductor materials; Surface waves;
  • fLanguage
    English
  • Journal_Title
    Antennas and Propagation, IEEE Transactions on
  • Publisher
    ieee
  • ISSN
    0018-926X
  • Type

    jour

  • DOI
    10.1109/8.1078
  • Filename
    1078
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=1153421