DocumentCode :
1153511
Title :
GaAs-GaAsSb based heterojunction bipolar transistor
Author :
Khamsehpour, B. ; Singer, K.E.
Author_Institution :
Dept. of Electr. Eng. & Electron., Univ. of Manchester Inst. of Sci. & Technol., UK
Volume :
26
Issue :
14
fYear :
1990
fDate :
7/5/1990 12:00:00 AM
Firstpage :
965
Lastpage :
967
Abstract :
The fabrication of the first GaAs-GaAsSb based heterojunction bipolar transistor is reported. Maximum current gains of 25 at a base current of 1 mA have been measured on devices employing a p-type 1000 AA GaAs0.93Sb0.07 base doped at 1*1019 cm-3 and GaAs emitter and collector regions with graded heterointerfaces. At present, devices so fabricated show unstable behaviour.
Keywords :
III-V semiconductors; antimony compounds; gallium arsenide; heterojunction bipolar transistors; semiconductor technology; 1 mA; 1000 A; GaAs emitter; GaAs-GaAsSb; GaAs 0.93Sb 0.07 base; base current; current gains; fabrication; graded heterointerfaces; heterojunction bipolar transistor; unstable behaviour;
fLanguage :
English
Journal_Title :
Electronics Letters
Publisher :
iet
ISSN :
0013-5194
Type :
jour
DOI :
10.1049/el:19900628
Filename :
107958
Link To Document :
https://search.ricest.ac.ir/dl/search/defaultta.aspx?DTC=49&DC=1153511
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