• DocumentCode
    1153511
  • Title

    GaAs-GaAsSb based heterojunction bipolar transistor

  • Author

    Khamsehpour, B. ; Singer, K.E.

  • Author_Institution
    Dept. of Electr. Eng. & Electron., Univ. of Manchester Inst. of Sci. & Technol., UK
  • Volume
    26
  • Issue
    14
  • fYear
    1990
  • fDate
    7/5/1990 12:00:00 AM
  • Firstpage
    965
  • Lastpage
    967
  • Abstract
    The fabrication of the first GaAs-GaAsSb based heterojunction bipolar transistor is reported. Maximum current gains of 25 at a base current of 1 mA have been measured on devices employing a p-type 1000 AA GaAs0.93Sb0.07 base doped at 1*1019 cm-3 and GaAs emitter and collector regions with graded heterointerfaces. At present, devices so fabricated show unstable behaviour.
  • Keywords
    III-V semiconductors; antimony compounds; gallium arsenide; heterojunction bipolar transistors; semiconductor technology; 1 mA; 1000 A; GaAs emitter; GaAs-GaAsSb; GaAs 0.93Sb 0.07 base; base current; current gains; fabrication; graded heterointerfaces; heterojunction bipolar transistor; unstable behaviour;
  • fLanguage
    English
  • Journal_Title
    Electronics Letters
  • Publisher
    iet
  • ISSN
    0013-5194
  • Type

    jour

  • DOI
    10.1049/el:19900628
  • Filename
    107958
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=1153511