• DocumentCode
    1153532
  • Title

    Double heterojunction GaAlAs/GaAs I2L integrated circuits

  • Author

    Vannel, J.P. ; Marty, Alain ; Tasselli, Josiane ; Cazarre, A. ; Bailbe, J.P.

  • Author_Institution
    Lab. d´Autom. et d´Anal. des Syst., Toulouse, France
  • Volume
    26
  • Issue
    14
  • fYear
    1990
  • fDate
    7/5/1990 12:00:00 AM
  • Firstpage
    969
  • Lastpage
    970
  • Abstract
    The fabrication and DC characterisation of GaAlAs/GaAs double heterojunction bipolar transistors (DHBTs) grown by molecular beam epitaxy are described. This baseline process has been developed for the implementation of heterojunction integrated injection logic (HI2L) integrated circuits. Results concerning an I2L ring oscillator and a divide-by-two circuit are given.
  • Keywords
    III-V semiconductors; aluminium compounds; bipolar integrated circuits; frequency dividers; gallium arsenide; heterojunction bipolar transistors; integrated circuit technology; integrated injection logic; integrated logic circuits; molecular beam epitaxial growth; oscillators; DC characterisation; DHBTs; HI 2L; I 2L; baseline process; divide-by-two circuit; double heterojunction bipolar transistors; fabrication; heterojunction integrated injection logic; molecular beam epitaxy; ring oscillator; semiconductors;
  • fLanguage
    English
  • Journal_Title
    Electronics Letters
  • Publisher
    iet
  • ISSN
    0013-5194
  • Type

    jour

  • DOI
    10.1049/el:19900630
  • Filename
    107960
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=1153532