Title :
Double heterojunction GaAlAs/GaAs I2L integrated circuits
Author :
Vannel, J.P. ; Marty, Alain ; Tasselli, Josiane ; Cazarre, A. ; Bailbe, J.P.
Author_Institution :
Lab. d´Autom. et d´Anal. des Syst., Toulouse, France
fDate :
7/5/1990 12:00:00 AM
Abstract :
The fabrication and DC characterisation of GaAlAs/GaAs double heterojunction bipolar transistors (DHBTs) grown by molecular beam epitaxy are described. This baseline process has been developed for the implementation of heterojunction integrated injection logic (HI2L) integrated circuits. Results concerning an I2L ring oscillator and a divide-by-two circuit are given.
Keywords :
III-V semiconductors; aluminium compounds; bipolar integrated circuits; frequency dividers; gallium arsenide; heterojunction bipolar transistors; integrated circuit technology; integrated injection logic; integrated logic circuits; molecular beam epitaxial growth; oscillators; DC characterisation; DHBTs; HI 2L; I 2L; baseline process; divide-by-two circuit; double heterojunction bipolar transistors; fabrication; heterojunction integrated injection logic; molecular beam epitaxy; ring oscillator; semiconductors;
Journal_Title :
Electronics Letters
DOI :
10.1049/el:19900630
