Title :
Charge storage in InAlAs/InGaAs/InP floating gate heterostructures
Author :
Lott, J.A. ; Klem, I.F. ; Weaver, H.T. ; Tigges, C.P. ; Radoslovich-Cibicki, V.
Author_Institution :
Sandia Nat. Lab., Albuquerque, NM, USA
fDate :
7/5/1990 12:00:00 AM
Abstract :
Charge retention in floating gate InAlAs/InGaAs/InP field effect transistors is limited by lateral electron motion along the storage channel, a different direction for motion than found for AlAs/GaAs devices. Storage times as a function of temperature for the InP based alloy devices are reported and compared with similar AlAs/GaAs devices by using Poisson equation models.
Keywords :
III-V semiconductors; aluminium compounds; field effect integrated circuits; gallium arsenide; indium compounds; integrated memory circuits; AlAs/GaAs devices; InAlAs-InGaAs-InP; InP based alloy devices; Poisson equation models; charge retention; floating gate FETs; lateral electron motion; semiconductors; storage channel; storage times; temperature effects;
Journal_Title :
Electronics Letters
DOI :
10.1049/el:19900632
