Title :
Five-Step (Pad–Pad Short–Pad Open–Short–Open) De-Embedding Method and Its Verification
Author :
Kang, In Man ; Jung, Seung-Jae ; Choi, Tae-Hoon ; Jung, Jae-Hong ; Chung, Chulho ; Kim, Han-Su ; Oh, Hansu ; Lee, Hyun Woo ; Jo, Gwangdoo ; Kim, Young-Kwang ; Kim, Han-Gu ; Kyu-Myung Choi
Author_Institution :
Syst. LSI Div., Samsung Electron., Yongin
fDate :
4/1/2009 12:00:00 AM
Abstract :
We present the method for five-step (pad-pad short-pad open-short-open) on-chip parasitic de-embedding. Its validation is verified by gate electrode resistance and input capacitance of transistors based on 45 -nm CMOS process. Optimized dummy structures to remove the parasitic components due to the pad and routing metal are proposed. Parameters extracted by the proposed method have excellent physical and theoretical trends.
Keywords :
MOSFET; S-parameters; RF MOSFET; five-step de-embedding method; gate electrode resistance; input capacitance; on-chip parasitic de-embedding; on-wafer RF measurement; Gate electrode resistance; RF MOSFETs; input capacitance; on-wafer RF measurement; parasitic de-embedding;
Journal_Title :
Electron Device Letters, IEEE
DOI :
10.1109/LED.2009.2013881
