DocumentCode
1153625
Title
Combined high power and high frequency operation of InGaAsP/InP lasers at 1.3 mu m
Author
Chen, Tiffani R. ; Zhuang, Y.H. ; Yariv, Amnon ; Blauvelt, Hank ; Bar-Chaim, N.
Author_Institution
Appl. Phys., California Inst. of Technol., Pasadena, CA, USA
Volume
26
Issue
14
fYear
1990
fDate
7/5/1990 12:00:00 AM
Firstpage
985
Lastpage
987
Abstract
A simultaneous operation of a semiconductor laser at high power and high speed was demonstrated in a buried crescent laser on a P-InP substrate. In a cavity length of 300 mu m, a maximum CW power of 130 mW at room temperature was obtained in a junction-up mounting configuration. A 3 dB bandwidth in excess of 12 GHz at an output power of 52 mW was observed.
Keywords
III-V semiconductors; gallium arsenide; gallium compounds; indium compounds; optical communication equipment; semiconductor junction lasers; 1.3 micron; 12 GHz; 130 mW; 300 micron; 52 mW; CW power; InGaAsP-InP; InP; bandwidth; buried crescent laser; cavity length; high frequency operation; high power operation; high speed operation; junction-up mounting configuration; output power; p-type InP substrates; room temperature; semiconductor laser; semiconductors;
fLanguage
English
Journal_Title
Electronics Letters
Publisher
iet
ISSN
0013-5194
Type
jour
DOI
10.1049/el:19900640
Filename
107970
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