Title :
Combined high power and high frequency operation of InGaAsP/InP lasers at 1.3 mu m
Author :
Chen, Tiffani R. ; Zhuang, Y.H. ; Yariv, Amnon ; Blauvelt, Hank ; Bar-Chaim, N.
Author_Institution :
Appl. Phys., California Inst. of Technol., Pasadena, CA, USA
fDate :
7/5/1990 12:00:00 AM
Abstract :
A simultaneous operation of a semiconductor laser at high power and high speed was demonstrated in a buried crescent laser on a P-InP substrate. In a cavity length of 300 mu m, a maximum CW power of 130 mW at room temperature was obtained in a junction-up mounting configuration. A 3 dB bandwidth in excess of 12 GHz at an output power of 52 mW was observed.
Keywords :
III-V semiconductors; gallium arsenide; gallium compounds; indium compounds; optical communication equipment; semiconductor junction lasers; 1.3 micron; 12 GHz; 130 mW; 300 micron; 52 mW; CW power; InGaAsP-InP; InP; bandwidth; buried crescent laser; cavity length; high frequency operation; high power operation; high speed operation; junction-up mounting configuration; output power; p-type InP substrates; room temperature; semiconductor laser; semiconductors;
Journal_Title :
Electronics Letters
DOI :
10.1049/el:19900640
