DocumentCode
1153660
Title
Localised temperature dynamics of GaAlAs laser facets investigated by Raman microprobe measurements
Author
Krantz, M.C. ; Rosen, H.J. ; Lenth, W.
Author_Institution
IBM Almaden Res. Center, San Jose, CA, USA
Volume
26
Issue
14
fYear
1990
fDate
7/5/1990 12:00:00 AM
Firstpage
990
Lastpage
992
Abstract
Raman micro-probe studies of diode laser facet temperatures in CW operation show a significant linear temperature rise below the laser threshold and a rapid nonlinear heating above the threshold. Dynamical measurements using current injection pulses show fast heating of the laser facet with a sub-microsecond risetime and much slower cooling within several micro-seconds.
Keywords
III-V semiconductors; Raman spectra of inorganic solids; aluminium compounds; gallium arsenide; laser beam effects; laser variables measurement; semiconductor junction lasers; spectral methods of temperature measurement; CW operation; GaAlAs laser facets; Raman microprobe measurements; current injection pulses; diode laser facet temperatures; dynamical measurements; fast heating; linear temperature rise; localised temperature dynamics; rapid nonlinear heating; semiconductors; slower cooling; sub-microsecond risetime;
fLanguage
English
Journal_Title
Electronics Letters
Publisher
iet
ISSN
0013-5194
Type
jour
DOI
10.1049/el:19900643
Filename
107973
Link To Document