• DocumentCode
    1153734
  • Title

    Local growth of HgCdTe layers by isothermal vapour phase epitaxy

  • Author

    Djuric, Z. ; Djinovic, Z. ; Jaksic, Zoran ; Totovski, D.

  • Author_Institution
    Inst. of Microelectron. Technol. & Single Crystals, Njegoseva, Yugoslavia
  • Volume
    26
  • Issue
    14
  • fYear
    1990
  • fDate
    7/5/1990 12:00:00 AM
  • Firstpage
    1005
  • Lastpage
    1006
  • Abstract
    The isothermal vapour phase epitaxy was used for local growth of epitaxial HgCdTe layers on a CdZnTe substrate. The growth was realised at the openings (windows) in CVD deposited SiOx mask. The procedure enables the production of local epitaxial structures, convenient for the fabrication of single and multi-element infrared detectors.
  • Keywords
    II-VI semiconductors; infrared detectors; mercury compounds; semiconductor epitaxial layers; semiconductor growth; vapour phase epitaxial growth; CdZnTe substrate; HgCdTe-CdZnTe; SiO x mask; VPE; epitaxial HgCdTe layers; heteroepitaxy; isothermal vapour phase epitaxy; local epitaxial structures; local growth; multi-element infrared detectors; semiconductors; windows;
  • fLanguage
    English
  • Journal_Title
    Electronics Letters
  • Publisher
    iet
  • ISSN
    0013-5194
  • Type

    jour

  • DOI
    10.1049/el:19900651
  • Filename
    107981
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=1153734