DocumentCode :
1153734
Title :
Local growth of HgCdTe layers by isothermal vapour phase epitaxy
Author :
Djuric, Z. ; Djinovic, Z. ; Jaksic, Zoran ; Totovski, D.
Author_Institution :
Inst. of Microelectron. Technol. & Single Crystals, Njegoseva, Yugoslavia
Volume :
26
Issue :
14
fYear :
1990
fDate :
7/5/1990 12:00:00 AM
Firstpage :
1005
Lastpage :
1006
Abstract :
The isothermal vapour phase epitaxy was used for local growth of epitaxial HgCdTe layers on a CdZnTe substrate. The growth was realised at the openings (windows) in CVD deposited SiOx mask. The procedure enables the production of local epitaxial structures, convenient for the fabrication of single and multi-element infrared detectors.
Keywords :
II-VI semiconductors; infrared detectors; mercury compounds; semiconductor epitaxial layers; semiconductor growth; vapour phase epitaxial growth; CdZnTe substrate; HgCdTe-CdZnTe; SiO x mask; VPE; epitaxial HgCdTe layers; heteroepitaxy; isothermal vapour phase epitaxy; local epitaxial structures; local growth; multi-element infrared detectors; semiconductors; windows;
fLanguage :
English
Journal_Title :
Electronics Letters
Publisher :
iet
ISSN :
0013-5194
Type :
jour
DOI :
10.1049/el:19900651
Filename :
107981
Link To Document :
https://search.ricest.ac.ir/dl/search/defaultta.aspx?DTC=49&DC=1153734
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