DocumentCode :
1153751
Title :
Characteristics of a-Plane Green Light-Emitting Diode Grown on r-Plane Sapphire
Author :
Ling, Shih-Chun ; Wang, Te-Chung ; Chen, Jun-Rong ; Liu, Po-Chun ; Ko, Tsung-Shine ; Chang, Bao-Yao ; Lu, Tien-Chang ; Kuo, Hao-Chung ; Wang, Shing-Chung ; Tsay, Jenq-Dar
Author_Institution :
Inst. of Electro-Opt. Eng., Nat. Chiao Tung Univ., Hsinchu, Taiwan
Volume :
21
Issue :
16
fYear :
2009
Firstpage :
1130
Lastpage :
1132
Abstract :
In this work, we have successfully grown a-plane green light-emitting diodes (LEDs) on r-plane sapphire and investigated the device characteristics of a-plane green LEDs. The apparent emission polarization anisotropy was observed and the polarization degree was as high as 67.4%. In addition, the electroluminescence (EL) spectra first revealed a wavelength blue-shift with increasing drive current to 20 mA, which could be attributed to the band-filling effect, and then the EL peak become constant. The current-voltage curve showed the forward voltage of a-plane LED grown on r-plane sapphire substrate was 3.43 V and the differential series resistance was measured to be about 24 Omega as 20-mA injected current. Furthermore, the output power was 240 muW at 100-mA drive current.
Keywords :
III-V semiconductors; electrical resistivity; electroluminescence; gallium compounds; indium compounds; light emitting diodes; light polarisation; spectral line shift; wide band gap semiconductors; Al2O3; InGaN-GaN; a-plane green LEDs; a-plane green light-emitting diodes; band-filling effect; current 100 mA; current 20 mA; current-voltage curve; differential series resistance; electroluminescence spectra; emission polarization anisotropy; power 240 muW; r-plane sapphire; wavelength blue-shift; Anisotropic magnetoresistance; Electroluminescence; Epitaxial growth; Gallium nitride; Industrial electronics; Light emitting diodes; Optical polarization; Piezoelectric polarization; Spontaneous emission; Substrates; A-plane GaN; electroluminescence (EL); green light-emitting diodes (LEDs); polarization degree;
fLanguage :
English
Journal_Title :
Photonics Technology Letters, IEEE
Publisher :
ieee
ISSN :
1041-1135
Type :
jour
DOI :
10.1109/LPT.2009.2023234
Filename :
5175501
Link To Document :
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