Observation of field induced refractive index variation in GaInAs/InP quantum wire (QW) structure

Author

Kikugawa, T. ; Ravikumar, K.G. ; Aizawa, Takehiro ; Arai, Shigehisa ; Suematsu, Yasuharu

Author_Institution

Dept. of Phys. Electron., Tokyo Inst. of Technol., Japan

Volume

26

Issue

14

fYear

1990

fDate

7/5/1990 12:00:00 AM

Firstpage

1012

Lastpage

1013

Abstract

A large refractive index variation of 2% was observed in a GaInAs/InP multi-layered quantum wire (QW) structure at a reverse bias voltage of 4 V. This index variation indicated clear polarisation dependence which agreed well with theoretical results for QWs. Three periods of GaInAs (9 nm)/InP (4 nm) multi-layered QW structure with the wire width of 25 to 35 nm was fabricated with a holographic lithography and a low defect ultra-high vacuum ECR-RIBE method on LP-OMVPE grown quantum film wafer.

Keywords

III-V semiconductors; electro-optical devices; electro-optical effects; gallium arsenide; indium compounds; optical communication equipment; optical modulation; optical switches; photolithography; refractive index; semiconductor epitaxial layers; semiconductor quantum wells; vapour phase epitaxial growth; 25 to 35 nm; 4 V; 4 nm; 9 nm; GaInAs-InP; LP-OMVPE grown quantum film wafer; electrorefractive effect; field induced refractive index variation; holographic lithography; low defect ultra-high vacuum ECR-RIBE method; multi-layered quantum wire; polarisation dependence; reverse bias voltage; semiconductors; wire width;

fLanguage

English

Journal_Title

Electronics Letters

Publisher

iet

ISSN

0013-5194

Type

jour

DOI

10.1049/el:19900655

Filename

107985