DocumentCode :
1153809
Title :
Mode locking of a semiconductor laser by self-synchronising optoelectronic feedback of the longitudinal mode beats
Author :
Nietzke, R. ; Sacher, Joachim ; Elsasser, W. ; Gobel, E.O.
Author_Institution :
Philipps-Univ., Marburg, West Germany
Volume :
26
Issue :
14
fYear :
1990
fDate :
7/5/1990 12:00:00 AM
Firstpage :
1016
Lastpage :
1018
Abstract :
It is demonstrate that mode locking of an external cavity GaAs/(GaAl)As semiconductor laser can be achieved by regenerative feedback of the amplified RF beats of the longitudinal modes detected by a fast photodetector. Stable pulse trains with 10 to 40 ps pulsewidth are generated by careful adjustment of DC bias, amplification of the electronic feedback and optoelectronic delay. Results are presented which explore the capability of this new mode locking technique for the generation of pulse codes for future OTDM systems.
Keywords :
III-V semiconductors; aluminium compounds; gallium arsenide; laser mode locking; semiconductor junction lasers; 10 to 40 ps; DC bias; GaAs-GaAlAs lasers; OTDM systems; amplification; amplified RF beats; electronic feedback; external cavity laser; fast photodetector; generation of pulse codes; longitudinal mode beats; mode locking; optoelectronic delay; pulsewidth; regenerative feedback; self-synchronising optoelectronic feedback; semiconductor laser; semiconductors; stable pulse trains;
fLanguage :
English
Journal_Title :
Electronics Letters
Publisher :
iet
ISSN :
0013-5194
Type :
jour
DOI :
10.1049/el:19900658
Filename :
107988
Link To Document :
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