Title :
Mode locking of a semiconductor laser by self-synchronising optoelectronic feedback of the longitudinal mode beats
Author :
Nietzke, R. ; Sacher, Joachim ; Elsasser, W. ; Gobel, E.O.
Author_Institution :
Philipps-Univ., Marburg, West Germany
fDate :
7/5/1990 12:00:00 AM
Abstract :
It is demonstrate that mode locking of an external cavity GaAs/(GaAl)As semiconductor laser can be achieved by regenerative feedback of the amplified RF beats of the longitudinal modes detected by a fast photodetector. Stable pulse trains with 10 to 40 ps pulsewidth are generated by careful adjustment of DC bias, amplification of the electronic feedback and optoelectronic delay. Results are presented which explore the capability of this new mode locking technique for the generation of pulse codes for future OTDM systems.
Keywords :
III-V semiconductors; aluminium compounds; gallium arsenide; laser mode locking; semiconductor junction lasers; 10 to 40 ps; DC bias; GaAs-GaAlAs lasers; OTDM systems; amplification; amplified RF beats; electronic feedback; external cavity laser; fast photodetector; generation of pulse codes; longitudinal mode beats; mode locking; optoelectronic delay; pulsewidth; regenerative feedback; self-synchronising optoelectronic feedback; semiconductor laser; semiconductors; stable pulse trains;
Journal_Title :
Electronics Letters
DOI :
10.1049/el:19900658