Title :
Very high frequency performance of nanometre scale GaAs MESFETS
Author :
Adams, Julie A. ; Thayne, I.G. ; Taylor, M.R.S. ; Wilkinson, C.D.W. ; Beaumont, S.P. ; Johnson, N.P. ; Kean, A.H. ; Stanley, C.R.
Author_Institution :
Dept. of Electron. & Electron. Eng., Nanoelectron. Res. Centre, Glasgow Univ., UK
fDate :
7/5/1990 12:00:00 AM
Abstract :
GaAs MESFETs with gate lengths from 300 nm down to 40 nm have been fabricated and characterised at microwave frequencies. The MESFETs have excellent DC and high frequency performance. It is shown that the unity gain cut-off frequency fT, is not inversely proportional to the gate-length, as a consequence of carrier transit delays.
Keywords :
III-V semiconductors; Schottky gate field effect transistors; gallium arsenide; solid-state microwave devices; 300 to 40 nm; DC performance; GaAs; MESFETS; carrier transit delays; f T; gate-length; high frequency performance; microwave frequencies; microwave performance; semiconductors; short channel effects; unity gain cut-off frequency;
Journal_Title :
Electronics Letters
DOI :
10.1049/el:19900660
