Title :
Analysis, Design, and
-Band Implementation of a Self-Biased Active Feedback
-Boosted Comm
Author :
Chamas, Ibrahim Ramez ; Raman, Sanjay
Author_Institution :
Qualcomm Inc., San Diego, CA
fDate :
3/1/2009 12:00:00 AM
Abstract :
This paper explores the use of active feedback to boost the transconductance of a common-gate (CG) low-noise amplifier and achieve simultaneous low noise and input power match. Unlike transformer coupled topologies, the CG input stage is dc-coupled to a self-biased common-source feedback amplifier (for gm boosting), thus eliminating the need of external bias circuitry. Noise and intermodulation analysis with and without gm boosting are extensively studied yielding closed-form expressions of the noise figure (NF) and third-order input-referred intercept point (IIP3) that are useful for circuit design and optimization. A 9.6-GHz differential prototype implemented in a 0.18-mum technology using only NMOS transistors, achieves a minimum NF of 4 dB, an IIP3 of -11.3 dBm, a return loss of -17 dB, and a transducer gain of 18 dB while dissipating 10 m (excluding buffer circuit) from a 1.8-V supply voltage. The active chip area is 0.11 mum2.
Keywords :
CMOS analogue integrated circuits; MOSFET; feedback amplifiers; field effect MMIC; intermodulation; low noise amplifiers; radiofrequency integrated circuits; CMOS LNA; Gm-boosted common-gate; NMOS transistors; X-band; circuit design; common-source feedback amplifier; frequency 9.6 GHz; gain 18 dB; intermodulation analysis; loss -17 dB; low noise amplifier; noise analysis; self-biased active feedback; size 0.18 mum; voltage 1.8 V; CMOS; low-noise amplifier (LNA); noise figure (NF); noise matching; radio frequency integrated circuits (RFICs);
Journal_Title :
Microwave Theory and Techniques, IEEE Transactions on
DOI :
10.1109/TMTT.2009.2013297