Magnetic surface anisotropy at the iron-silicon interface

Author

Frait, Zdenek ; Fraitova, Dagmar ; Dufour, Catherine ; Mangin, Philippe ; Marchal, Gé;rard

Author_Institution

Inst. of Phys., Czechoslovak Acad. of Sci., Prague, Czechoslovakia

Volume

30

Issue

2

fYear

1994

fDate

3/1/1994 12:00:00 AM

Firstpage

711

Lastpage

713

Abstract

The results of measurements of the surface magnetic energy at the iron-silicon interface by means of the standing spin-wave resonance experiments, performed at RT and at frequencies of 17 and 25 GHz, are reported. The samples in the form of thin polycrystalline iron films (10 to 220 nm thick) sandwiched between silicon layers (7.5 nm thick) were prepared by evaporation in UHV. The surface magnetic energy was found of the easy plane type (negative surface anisotropy) with values in the range -0.4 to -1.8 erg/cm², its origin is discussed. The theoretical methods used for the evaluation of the experiment are commented, the penetration depth of the spin-wave surface mode is evaluated

Keywords

elemental semiconductors; ferromagnetic resonance; iron; magnetic anisotropy; magnetic interface phenomena; magnetic surface phenomena; magnetic thin films; silicon; spin waves; 10 to 220 nm; 300 K; Fe-Si; Fe-Si interface; films; magnetic surface anisotropy; penetration depth; spin-wave resonance; spin-wave surface mode; Anisotropic magnetoresistance; Energy measurement; Frequency measurement; Iron; Magnetic anisotropy; Magnetic films; Magnetic resonance; Performance evaluation; Perpendicular magnetic anisotropy; Semiconductor films;

fLanguage

English

Journal_Title

Magnetics, IEEE Transactions on

Publisher

ieee

ISSN

0018-9464

Type

jour

DOI

10.1109/20.312384

Filename

312384