DocumentCode
1154071
Title
Novel integral heatsink structures for power MMICs
Author
Bestwick, P.R. ; Davies, I.
Author_Institution
Plessey Res. Caswell Ltd., Towcester, UK
Volume
26
Issue
14
fYear
1990
fDate
7/5/1990 12:00:00 AM
Firstpage
1050
Lastpage
1051
Abstract
A standard GaAs ´foundry´ process has been extended to produce power FET devices developing 6 W at S-band. The devices are fabricated in GaAs using ion implanted active layers with a deep acceptor implant. The substrate thickness of the standard GaAs foundry process has been retained, with novel integral heat-sinks under the power devices. This approach ensures high manufacturing yield and compatibility with a well characterised GaAs foundry process.
Keywords
III-V semiconductors; MMIC; field effect integrated circuits; gallium arsenide; heat sinks; integrated circuit manufacture; integrated circuit technology; ion implantation; power integrated circuits; 6 W; S-band; SHF; UHF; deep acceptor implant; high manufacturing yield; integral heatsink structures; ion implanted active layers; power FET devices; power MMICs; semiconductors; standard GaAs foundry process; substrate thickness;
fLanguage
English
Journal_Title
Electronics Letters
Publisher
iet
ISSN
0013-5194
Type
jour
DOI
10.1049/el:19900680
Filename
108009
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