Title :
High current gain GaInAs/InP hot electron transistor
Author :
Yamaura, S. ; Miyamoto, Y. ; Furuya, K.
Author_Institution :
Dept. of Electr. & Electron. Eng., Tokyo Inst. of Technol., Japan
fDate :
7/5/1990 12:00:00 AM
Abstract :
The highest current gain (more than 100 at 77 K) is reported in GaInAs/InP hot electron transistor (HET) grown by organo-metallic vapour-phase epitaxy. This result shows the promise of the GaInAs/InP material system for ballistic electron devices. A sudden increase of the collector current in the common-emitter characteristics was observed, which would have been caused by the quantum-interference effect.
Keywords :
III-V semiconductors; gallium arsenide; hot electron transistors; indium compounds; semiconductor epitaxial layers; vapour phase epitaxial growth; 77 K; GaInAs-InP; HET; OMVPE; ballistic electron devices; common-emitter characteristics; current gain; gain 100; hot electron transistor; organo-metallic vapour-phase epitaxy; quantum-interference effect; semiconductors;
Journal_Title :
Electronics Letters
DOI :
10.1049/el:19900683
