• DocumentCode
    1154129
  • Title

    High quality 80Gbit/s InP DHBT selector and its use for NRZ-RZ conversion

  • Author

    Konczykowska, A. ; Andre, Ph. ; Jorge, F. ; Godin, J.

  • Author_Institution
    Alcatel Alsthom Recherche, Marcoussis, France
  • Volume
    39
  • Issue
    1
  • fYear
    2003
  • Firstpage
    49
  • Lastpage
    51
  • Abstract
    A high speed selector IC fabricated in self-aligned InP DHBT technology is presented. Circuit measurements at 80 Gbit/s (measurement setup limitation) show very good eye opening (0.56 ps RMS time jitter, low rise and fall times). Circuit operation as 40 Gbit/s NRZ to RZ converter was also characterised.
  • Keywords
    III-V semiconductors; bipolar digital integrated circuits; data conversion; heterojunction bipolar transistors; high-speed integrated circuits; indium compounds; 80 Gbit/s; InP; NRZ-RZ conversion; eye opening; fall time; high-speed selector IC; rise time; self-aligned InP DHBT technology; time jitter;
  • fLanguage
    English
  • Journal_Title
    Electronics Letters
  • Publisher
    iet
  • ISSN
    0013-5194
  • Type

    jour

  • DOI
    10.1049/el:20030103
  • Filename
    1182344
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=1154129