Title :
High quality 80Gbit/s InP DHBT selector and its use for NRZ-RZ conversion
Author :
Konczykowska, A. ; Andre, Ph. ; Jorge, F. ; Godin, J.
Author_Institution :
Alcatel Alsthom Recherche, Marcoussis, France
Abstract :
A high speed selector IC fabricated in self-aligned InP DHBT technology is presented. Circuit measurements at 80 Gbit/s (measurement setup limitation) show very good eye opening (0.56 ps RMS time jitter, low rise and fall times). Circuit operation as 40 Gbit/s NRZ to RZ converter was also characterised.
Keywords :
III-V semiconductors; bipolar digital integrated circuits; data conversion; heterojunction bipolar transistors; high-speed integrated circuits; indium compounds; 80 Gbit/s; InP; NRZ-RZ conversion; eye opening; fall time; high-speed selector IC; rise time; self-aligned InP DHBT technology; time jitter;
Journal_Title :
Electronics Letters
DOI :
10.1049/el:20030103
