• DocumentCode
    1154137
  • Title

    Polarisation dependence of field-induced refractive index variation in strained and unstrained quantum well structures

  • Author

    Chong, T.C. ; Wan, H.W. ; Chua, S.J.

  • Author_Institution
    Dept. of Electr. Eng., Nat. Univ. of Singapore, Singapore
  • Volume
    26
  • Issue
    14
  • fYear
    1990
  • fDate
    7/5/1990 12:00:00 AM
  • Firstpage
    1060
  • Lastpage
    1061
  • Abstract
    The polarisation dependence of the field-induced refractive index variation in strained and unstrained quantum well structures is analysed. It is shown that the effect of strain combined with the quantum-size effect can be used to control the polarisation dependence of the refractive index variation which is significant in thin quantum wells.
  • Keywords
    electro-optical devices; light polarisation; refractive index; semiconductor quantum wells; effect of strain; electrooptic modulator application; field-induced refractive index variation; polarisation dependence; polarisation dependence control; quantum-size effect; strained quantum well structures; thin quantum wells; unstrained quantum well structures;
  • fLanguage
    English
  • Journal_Title
    Electronics Letters
  • Publisher
    iet
  • ISSN
    0013-5194
  • Type

    jour

  • DOI
    10.1049/el:19900686
  • Filename
    108015
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=1154137