• DocumentCode
    1154177
  • Title

    350 mW reliable operation in fundamental transverse-mode InGaAs (λ=1.05 μm)/ GaAsP strain-compensated laser diodes

  • Author

    Akinaga, E. ; Kuniyasu, T. ; Matsumoto, K. ; Fukunaga, T. ; Hayakawa, T.

  • Author_Institution
    Miyanodai Technol. Dev. Center, Fuji Photo Film Co. Ltd., Kanagawa, Japan
  • Volume
    39
  • Issue
    1
  • fYear
    2003
  • Firstpage
    55
  • Lastpage
    57
  • Abstract
    High reliability has been achieved in 1.05 μm fundamental transverse-mode InGaAs single quantum well laser diodes using strain-compensating GaAsP tensile strain barriers. Stable fundamental transverse-mode operation up to 400 mW and 350 mW CW operation over 2500 h at 50°C were realised.
  • Keywords
    III-V semiconductors; compensation; gallium arsenide; laser modes; laser stability; laser transitions; quantum well lasers; semiconductor device reliability; 1.05 micron; 2500 h; 350 mW; 400 mW; 50 degC; CW operation; GaAsP; GaAsP laser diodes; GaAsP strain-compensated LDs; GaAsP tensile strain barriers; SQW laser diodes; fundamental transverse-mode; reliable operation; semiconductor lasers; single quantum well LDs; stable operation;
  • fLanguage
    English
  • Journal_Title
    Electronics Letters
  • Publisher
    iet
  • ISSN
    0013-5194
  • Type

    jour

  • DOI
    10.1049/el:20030081
  • Filename
    1182348
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=1154177