Title :
Growth of Al:Er:O alloys on silicon
Author :
Kechouane, Mohamed ; L´Haridon, H. ; Salvi, M. ; Favennec, P.N. ; Moutonnet, D. ; Gauneau, M. ; Mercier, J.P.
Author_Institution :
CNET/LAB/OCM, Lannion, France
fDate :
7/5/1990 12:00:00 AM
Abstract :
Evaporation, implantation and annealing techniques are combined to realise a new ternary material AlxEryOz on silicon. The layer composition as well as the interaction of the different elements with the substrate are analysed by Rutherford backscattering and SIMS techniques. SEM and photoluminescence measurements reveal that the 1.54 mu m emission could be caused by the microparticles doped with Er which present a composition close to that of a garnet one.
Keywords :
Rutherford backscattering; aluminium compounds; annealing; erbium compounds; ion implantation; luminescence of inorganic solids; photoluminescence; scanning electron microscope examination of materials; secondary ion mass spectra; semiconductor growth; semiconductor materials; semiconductor thin films; silicon; substrates; vapour deposition; 1.54 micron; Al xEr yO z-Si; RBS; Rutherford backscattering; SEM; SIMS; Si substrate; annealing techniques; evaporation deposition; garnet composition; ion implantation; layer composition; photoluminescence measurements; ternary material Al xEr yO z;
Journal_Title :
Electronics Letters
DOI :
10.1049/el:19900691
