DocumentCode
1154210
Title
Low-divergence singlemode 1.55 μm VCSEL with 1 mW output power
Author
Hsu, A. ; Leonard, D. ; Cao, N. ; Ahedo, EM ; LaBounty, C. ; MacDougal, M.H.
Author_Institution
Gore Photonics, Lompoc, CA, USA
Volume
39
Issue
1
fYear
2003
Firstpage
59
Lastpage
61
Abstract
Experimental results for a monolithic singlemode vertical-cavity surface-emitting laser (VCSEL) at 1.55 μm are reported. Single-transverse-mode operation with >40 dB sidemode suppression and a peak power of 1.03 mW at 20°C is obtained. Far-field measurements show low divergence with a measured far-field angle of 7.9° at 1 mW output power.
Keywords
III-V semiconductors; distributed Bragg reflector lasers; indium compounds; laser cavity resonators; laser modes; laser transitions; semiconductor lasers; surface emitting lasers; 1 mW; 1.55 micron; 20 degC; AlGaAs-GaAs; AlGaAs/GaAs DBR mirror; InP; InP-based active region; distributed Bragg reflector mirror; long-wavelength VCSEL; low-divergence VCSEL; monolithic vertical-cavity SEL; single transverse-mode operation; singlemode VCSEL; surface-emitting laser;
fLanguage
English
Journal_Title
Electronics Letters
Publisher
iet
ISSN
0013-5194
Type
jour
DOI
10.1049/el:20030098
Filename
1182351
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