Title :
Low-divergence singlemode 1.55 μm VCSEL with 1 mW output power
Author :
Hsu, A. ; Leonard, D. ; Cao, N. ; Ahedo, EM ; LaBounty, C. ; MacDougal, M.H.
Author_Institution :
Gore Photonics, Lompoc, CA, USA
Abstract :
Experimental results for a monolithic singlemode vertical-cavity surface-emitting laser (VCSEL) at 1.55 μm are reported. Single-transverse-mode operation with >40 dB sidemode suppression and a peak power of 1.03 mW at 20°C is obtained. Far-field measurements show low divergence with a measured far-field angle of 7.9° at 1 mW output power.
Keywords :
III-V semiconductors; distributed Bragg reflector lasers; indium compounds; laser cavity resonators; laser modes; laser transitions; semiconductor lasers; surface emitting lasers; 1 mW; 1.55 micron; 20 degC; AlGaAs-GaAs; AlGaAs/GaAs DBR mirror; InP; InP-based active region; distributed Bragg reflector mirror; long-wavelength VCSEL; low-divergence VCSEL; monolithic vertical-cavity SEL; single transverse-mode operation; singlemode VCSEL; surface-emitting laser;
Journal_Title :
Electronics Letters
DOI :
10.1049/el:20030098
