Title :
A parameter extraction algorithm for an IGBT behavioral model
Author :
Kang, Wanying ; Ahn, Hyungkeun ; Nokali, M.A.E.
Author_Institution :
Dept. of Electr. Eng., Univ. of Pittsburgh, PA, USA
Abstract :
We propose a new extraction algorithm for the parameters of an insulated gate bipolar transistor dynamic behavioral model. The algorithm relies on the availability of experimental data from the manufacturers and uses Matlab optimization toolbox to extract the parameters automatically. The theoretical predictions of the algorithm are compared with both the experimental and the simulation data that use alternative extraction methods and are found to be in excellent agreement.
Keywords :
electronic engineering computing; insulated gate bipolar transistors; optimisation; IGBT dynamic behavioral model; Matlab optimization toolbox; insulated gate bipolar transistor dynamic behavioral model; parameter extraction; Circuit simulation; Data mining; Fabrication; Insulated gate bipolar transistors; Manufacturing automation; Mathematical model; Nonlinear equations; Parameter extraction; Physics; Power semiconductor switches; 65; IGBT; Insulated gate bipolar transistor; Matlab optimization toolbox to extract the parameters;
Journal_Title :
Power Electronics, IEEE Transactions on
DOI :
10.1109/TPEL.2004.836635
