DocumentCode :
1154249
Title :
Poly-Si Thin-Film Transistor Nonvolatile Memory Using Ge Nanocrystals as a Charge Trapping Layer Deposited by the Low-Pressure Chemical Vapor Deposition
Author :
Kuo, Po-Yi ; Chao, Tien-Sheng ; Huang, Jyun-Siang ; Lei, Tan-Fu
Author_Institution :
Dept. of Electrophys., Nat. Chiao Tung Univ., Hsinchu
Volume :
30
Issue :
3
fYear :
2009
fDate :
3/1/2009 12:00:00 AM
Firstpage :
234
Lastpage :
236
Abstract :
We have successfully developed and fabricated a poly-Si thin-film transistor (poly-Si TFT) nonvolatile memory using Ge nanocrystals (Ge-NCs) as a charge trapping layer. Process compatibility and memory operation of the device were investigated. The Ge-NC trapping layer was directly deposited by low-pressure chemical vapor deposition at 370degC. Results show that the new poly-Si TFT nonvolatile Ge-NC memory has good programming/erasing efficiency, long charge retention time, and good endurance characteristics. These results show that poly-Si TFT nonvolatile Ge-NC memory is the promising nonvolatile memory candidate for system-on-panel application in the future.
Keywords :
chemical vapour deposition; elemental semiconductors; germanium; nanostructured materials; random-access storage; silicon; thin film transistors; Ge; Si; TFT; charge trapping layer; low-pressure chemical vapor deposition; nanocrystals; nonvolatile memory; system-on-panel application; temperature 370 degC; thin-film transistor; Charge retention; Ge nanocrystals (Ge-NCs); endurance; nonvolatile memory; polycrystalline silicon thin-film transistors (poly-Si TFTs); programming/erasing;
fLanguage :
English
Journal_Title :
Electron Device Letters, IEEE
Publisher :
ieee
ISSN :
0741-3106
Type :
jour
DOI :
10.1109/LED.2008.2011145
Filename :
4781791
Link To Document :
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