Influence of ion implantation on permeability disaccommodation and magnetic losses of cobalt

Author

Klugmann, Eugeniusz

Author_Institution

Dept. of Dept. of Solid-State Eleectronics, Tech. Univ. Gdansk, Poland

Volume

30

Issue

2

fYear

1994

fDate

3/1/1994 12:00:00 AM

Firstpage

763

Lastpage

765

Abstract

Effect of nitrogen and oxygen ion implantation (80 keV) on thin polycrystalline cobalt wire have been studied on the basis of residual loss angle and magnetic after-effect measurements from 300 K to 450 K, using an automated Maxwell bridge. On a strongly temperature-dependent residual loss angle curve, after oxygen ion implantation (dose 10¹⁹ m^-2), an additional-radiation maximum at 350 K occurs, which might be attributed to a relaxation effect due to a reorientational or migrational motion of interstitial atoms

Keywords

cobalt; ferromagnetic properties of substances; interstitials; ion implantation; magnetic aftereffect; magnetic impurity interactions; magnetic leakage; magnetic permeability; magnetic permeability measurement; magnetic relaxation; nitrogen; oxygen; 300 to 450 K; Co:N; Co:N(O) wire; Co:O; interstitial migrational motion; interstitial reorientational motion; ion implantation; magnetic after-effect; magnetic losses; permeability disaccommodation; relaxation effect; residual loss angle; Atomic measurements; Bridge circuits; Cobalt; Ion implantation; Loss measurement; Magnetic field measurement; Magnetic losses; Nitrogen; Permeability; Temperature;

fLanguage

English

Journal_Title

Magnetics, IEEE Transactions on

Publisher

ieee

ISSN

0018-9464

Type

jour

DOI

10.1109/20.312401

Filename

312401