Title :
Electrical properties of silicon dioxide deposited at low temperature by metal-organic microwave plasma CVD technique
Author :
Ray, S.K. ; Maiti, C.K. ; Chakrabarti, N.B.
Author_Institution :
Dept. of Electron., India Inst. of Technol., Kharagpur, India
fDate :
7/5/1990 12:00:00 AM
Abstract :
Electrical properties of silicon dioxide films deposited on Si at low temperature by microwave plasma enhanced chemical vapour deposition using tetraethylorthosilicate and oxygen have been investigated. Properties of the films deposited on a thin thermal oxide and on an in-situ oxygen plasma treated silicon surface approach those of thermally grown oxide films.
Keywords :
dielectric thin films; integrated circuit technology; oxidation; plasma CVD coatings; semiconductor technology; silicon; silicon compounds; substrates; surface treatment; C-V characteristics; PECVD; Si; SiO 2-Si; SiO 2-SiO 2-Si; TEOS; electrical properties; low temperature deposition; metal-organic microwave plasma CVD technique; tetraethylorthosilicate; thin thermal oxide;
Journal_Title :
Electronics Letters
DOI :
10.1049/el:19900701
