Title :
Passive mode-locking of monolithic InGaAs/AlGaAs double quantum well lasers at 42 GHz repetition rate
Author :
Sanders, Sean ; Eng, L. ; Yariv, Amnon
Author_Institution :
Dept. of Appl. Phys., California Inst. of Technol., Pasadena, CA, USA
fDate :
7/5/1990 12:00:00 AM
Abstract :
Pulse trains with a 42 GHz repetition rate were generated by monolithic InGaAs/AlGaAs double quantum well lasers at a wavelength of 9850 AA. The cavity was electrically divided into three regions, one providing gain and the other two providing saturable absorption. The optical modulation has a depth greater than 98% and full-width at half-maximum under 6 ps, and bias conditions for sustained mode-locking are determined.
Keywords :
III-V semiconductors; aluminium compounds; gallium arsenide; indium compounds; laser mode locking; optical modulation; semiconductor junction lasers; semiconductor quantum wells; 42 GHz; 6 ps; 9850 A; InGaAs-AlGaAs; bias conditions; double quantum well lasers; monolithic lasers; optical modulation; passive mode locking; pulse repetition rate; semiconductors; sustained mode-locking; wavelength;
Journal_Title :
Electronics Letters
DOI :
10.1049/el:19900704
