Experimental evidence for trap-induced photoconductive kink In AlGaAs/GaAs HEMTS

Author

Thomasian, A. ; Rezazadeh, A.A. ; Everard, J.K.A. ; Hipwood, L.G.

Author_Institution

GEC Hirst Res. Centre, Marconi Microwave Lab., Wembley, UK

Volume

26

Issue

14

fYear

1990

fDate

7/5/1990 12:00:00 AM

Firstpage

1094

Lastpage

1095

Abstract

The microwave small-signal and high frequency noise performance of AlGaAs/GaAs HEMTs have been assessed, both with and without illumination at room temperature. The measurements were carried out over the bias range where the photo-induced kink in the DC output characteristics is observed. The results obtained have been compared with the authors´ previously reported kink phenomenon in the output characteristics of these devices. The postulated electron trapping mechanism is confirmed as the cause of the kink.

Keywords

III-V semiconductors; aluminium compounds; electron device noise; gallium arsenide; high electron mobility transistors; photoconductivity; solid-state microwave devices; AlGaAs-GaAs; DC output characteristics; HEMTS; bias range; electron trapping mechanism; high frequency noise performance; illumination effects; kink phenomenon; microwave small-signal performance; output characteristics; parasitic phenomena; photo-induced kink; room temperature; semiconductors; trap-induced photoconductive kink; without illumination;

fLanguage

English

Journal_Title

Electronics Letters

Publisher

iet

ISSN

0013-5194

Type

jour

DOI

10.1049/el:19900708

Filename

108037