• DocumentCode
    1154454
  • Title

    Supermodes in Broad Ridge (Al,In)GaN Laser Diodes

  • Author

    Braun, Harald ; Rogowsky, Stephan ; Schwarz, Ulrich T. ; Brüninghoff, Stefanie ; Lell, Alfred ; Lutgen, Stephan ; Strauss, Uwe

  • Author_Institution
    Inst. fur Angewandte und Exp. Phys., Univ. of Regensburg, Regensburg, Germany
  • Volume
    45
  • Issue
    9
  • fYear
    2009
  • Firstpage
    1074
  • Lastpage
    1083
  • Abstract
    Broad area (Al,In)GaN laser diodes (LDs) are suitable for high optical output power in the near UV to blue spectral range. But for ridge widths larger than a few micrometers, the occurrence of filamentation is well known. We present experimental evidence that the single filaments tend to be phase-locked with defined phase offset and build up a so called supermode. Depending on driving current a coherent or incoherent superposition of different supermodes can be observed, which has a significant impact on the corresponding lateral far-field pattern. By a simulated reconstruction of the lateral mode profile of the laser mode propagating in free space we retrieve the field and phase distribution of the laser mode in the waveguide. In this context the coupling mechanism is discussed and the mode behavior is compared to supermodes in GaAs laser diode arrays.
  • Keywords
    III-V semiconductors; aluminium compounds; indium compounds; laser mode locking; laser modes; semiconductor lasers; wide band gap semiconductors; AlInGaN; blue spectral range; broad ridge laser diodes; coherent superposition; coupling mechanism; incoherent superposition; lateral far-field pattern; lateral mode profile; near UV range; phase-locked laser; ridge waveguide; supermode laser; Diode lasers; Gallium arsenide; Laser modes; Optical arrays; Optical coupling; Optical propagation; Optical waveguides; Power generation; Semiconductor laser arrays; Waveguide lasers; Gallium compounds; laser modes; semiconductor lasers;
  • fLanguage
    English
  • Journal_Title
    Quantum Electronics, IEEE Journal of
  • Publisher
    ieee
  • ISSN
    0018-9197
  • Type

    jour

  • DOI
    10.1109/JQE.2009.2019614
  • Filename
    5175665