Title :
Two-dimensional numerical analysis of lasing characteristics for self-aligned structure semiconductor lasers
Author :
Ueno, Masayasu ; Asada, Susumu ; Kumashiro, Shigetaka
Author_Institution :
NEC Corp., Kawasaki, Japan
fDate :
6/1/1990 12:00:00 AM
Abstract :
Lasing characteristics in 0.78 μm AlGaAs-GaAs self-aligned structure (SAS) lasers are calculated on the basis of a newly developed two-dimensional analytical method. The calculated results are compared in detail with experimental results for MOVPE (metalorganic vapor phase epitaxial) grown SAS lasers. It is shown that calculated results agree well with experimental results, and that the newly developed two-dimensional simulator is very effective in calculating actual lasing characteristics accurately. The optimum design conditions for AlGaAs-GaAs SAS lasers obtained from experimental and calculated results are discussed
Keywords :
III-V semiconductors; aluminium compounds; gallium arsenide; laser theory; semiconductor junction lasers; 0.78 micron; 2D numerical laser analysis; AlGaAs-GaAs; MOVPE; lasing characteristics; metalorganic vapor phase epitaxial; optimum design conditions; self-aligned structure semiconductor lasers; Epitaxial growth; Epitaxial layers; Laser modes; Laser stability; National electric code; Numerical analysis; Optical design; Semiconductor lasers; Shape; Synthetic aperture sonar;
Journal_Title :
Quantum Electronics, IEEE Journal of
