Title :
Mid-infrared electroluminescence from device with changeable electron-hole distance
Author :
Vasilyev, Yu B. ; Solov, V.A. ; Meltser, B.Ya. ; Semenov, A.N. ; Ivanov, S.V. ; Kop´ev, P.S. ; Ulbrich, N. ; Abstreiter, G. ; Amann, M.-C.
Author_Institution :
Ioffe Phys. Tech. Inst., St. Petersburg, Russia
Abstract :
A report is presented on the observation of mid-infrared electroluminescence from a multi-period bilayer type-II structure in which the effective interlayer separation is controlled by bias. The emission with powers in the microwatt range is characterised by a linear dependence of the photon energy on the bias.
Keywords :
III-V semiconductors; aluminium compounds; electroluminescence; electroluminescent devices; gallium arsenide; infrared sources; quantum well devices; semiconductor quantum wells; AlGaAsSb; AlGaAsSb quantum well; GaSb; MBE; bias dependence; changeable electron-hole distance; effective interlayer separation control; microwatt range emission; mid-IR electroluminescence; mid-infrared electroluminescence; molecular beam epitaxy; multi-period bilayer type-II structure; p+-GaSb substrates; photon energy linear dependence;
Journal_Title :
Electronics Letters
DOI :
10.1049/el:20030045
