• DocumentCode
    1154565
  • Title

    Mid-infrared electroluminescence from device with changeable electron-hole distance

  • Author

    Vasilyev, Yu B. ; Solov, V.A. ; Meltser, B.Ya. ; Semenov, A.N. ; Ivanov, S.V. ; Kop´ev, P.S. ; Ulbrich, N. ; Abstreiter, G. ; Amann, M.-C.

  • Author_Institution
    Ioffe Phys. Tech. Inst., St. Petersburg, Russia
  • Volume
    39
  • Issue
    1
  • fYear
    2003
  • Firstpage
    108
  • Lastpage
    110
  • Abstract
    A report is presented on the observation of mid-infrared electroluminescence from a multi-period bilayer type-II structure in which the effective interlayer separation is controlled by bias. The emission with powers in the microwatt range is characterised by a linear dependence of the photon energy on the bias.
  • Keywords
    III-V semiconductors; aluminium compounds; electroluminescence; electroluminescent devices; gallium arsenide; infrared sources; quantum well devices; semiconductor quantum wells; AlGaAsSb; AlGaAsSb quantum well; GaSb; MBE; bias dependence; changeable electron-hole distance; effective interlayer separation control; microwatt range emission; mid-IR electroluminescence; mid-infrared electroluminescence; molecular beam epitaxy; multi-period bilayer type-II structure; p+-GaSb substrates; photon energy linear dependence;
  • fLanguage
    English
  • Journal_Title
    Electronics Letters
  • Publisher
    iet
  • ISSN
    0013-5194
  • Type

    jour

  • DOI
    10.1049/el:20030045
  • Filename
    1182383
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=1154565