A new hybrid device using magnetostrictive amorphous films and piezoelectric substrates

Author

Arai, K.I. ; Muranaka, C.S. ; Yamaguchi, M.

Author_Institution

Res. Inst. of Electr. Commun., Tohoku Univ., Sendai, Japan

Volume

30

Issue

2

fYear

1994

fDate

3/1/1994 12:00:00 AM

Firstpage

916

Lastpage

918

Abstract

A new hybrid device composed of a magnetostrictive amorphous FeSiB film on piezoelectric PZT substrate is described. DC and AC electric fields were applied to the PZT substrate and the magnetic properties of the magnetostrictive film were observed. Both the initial permeability and the coercive field of the film changed drastically (about 300%) due to the inverse magnetostrictive effect when electric fields were applied. A possible application of this hybrid element is a voltage controlled variable inductor

Keywords

boron alloys; coercive force; electromagnetic induction; ferromagnetic properties of substances; iron alloys; magnetic permeability; magnetic properties of amorphous substances; magnetic thin film devices; magnetic thin films; magnetostriction; silicon alloys; FeSiB; PZT; PbZrO3TiO3; coercive field; hybrid device; inverse magnetostrictive effect; magnetostrictive amorphous films; permeability; piezoelectric substrates; voltage controlled variable inductor; Amorphous magnetic materials; Amorphous materials; Electric fields; Magnetic devices; Magnetic films; Magnetic properties; Magnetostriction; Magnetostrictive devices; Piezoelectric films; Substrates;

fLanguage

English

Journal_Title

Magnetics, IEEE Transactions on

Publisher

ieee

ISSN

0018-9464

Type

jour

DOI

10.1109/20.312444

Filename

312444