Title :
AlGaN/GaN current aperture vertical electron transistors fabricated by photoelectrochemical wet etching
Author :
Gao, Y. ; Stonas, A.R. ; Ben-Yaacov, I. ; Mishra, U. ; DenBaars, S.P. ; Hu, E.L.
Author_Institution :
Dept. of Mater., California Univ., Santa Barbara, CA, USA
Abstract :
Photoelectrochemical (PEC) wet etching was used to form the aperture of a novel AlGaN/GaN CAVET current aperture vertical electron transistor (CAVET) device. The PEC etch was optimised to produce a smooth, uniform undercut through the selective removal of the lower bandgap InGaN. The I-V characteristics of the initial devices indicate that modulation and pinch-off of the current can be obtained.
Keywords :
III-V semiconductors; aluminium compounds; etching; gallium compounds; power field effect transistors; sapphire; two-dimensional electron gas; wide band gap semiconductors; 2DEG; Al2O3; AlGaN-GaN; AlGaN/GaN CAVET device; I-V characteristics; PEC etch optimisation; aperture formation; current aperture vertical electron transistors; current modulation; current pinch-off; device fabrication; high power devices; lower bandgap InGaN removal; photoelectrochemical wet etching; sapphire substrate; smooth uniform undercut; two-dimensional electron gas;
Journal_Title :
Electronics Letters
DOI :
10.1049/el:20030018
