• DocumentCode
    1154837
  • Title

    Demonstration of first 1050 V, 21.7 mΩ cm2 normally-off 4H-SiC junction field-effect transistor with implanted vertical channel

  • Author

    Zhao, J.H. ; Alexandrov, F. ; Fursin, L. ; Weiner, Tvl

  • Author_Institution
    Dept. of Electr. & Comput. Eng., Rutgers Univ., Piscataway, NJ, USA
  • Volume
    39
  • Issue
    1
  • fYear
    2003
  • Firstpage
    151
  • Lastpage
    152
  • Abstract
    The first demonstration of a normally-off 4H-SiC double-gated, vertical junction field-effect transistor (VJFET) with implanted vertical channel without using epitaxial regrowth is reported. With an 11 μm, 1×1016 cm-3 doped drift layer, over 1000 V VJFETs in the normally-off mode have been fabricated with a specific on-resistance of 21.7 mΩ cm2.
  • Keywords
    ion implantation; junction gate field effect transistors; power field effect transistors; silicon compounds; wide band gap semiconductors; 1050 V; 11 micron; 4H-SiC vertical channel JFET; N ion implantation; SiC:N; VJFETs; doped drift layer; double-gated JFET; high power JFETs; implanted vertical channel; normally-off mode; specific on-resistance; vertical junction field-effect transistor;
  • fLanguage
    English
  • Journal_Title
    Electronics Letters
  • Publisher
    iet
  • ISSN
    0013-5194
  • Type

    jour

  • DOI
    10.1049/el:20030104
  • Filename
    1182411
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=1154837