Title :
Demonstration of first 1050 V, 21.7 mΩ cm2 normally-off 4H-SiC junction field-effect transistor with implanted vertical channel
Author :
Zhao, J.H. ; Alexandrov, F. ; Fursin, L. ; Weiner, Tvl
Author_Institution :
Dept. of Electr. & Comput. Eng., Rutgers Univ., Piscataway, NJ, USA
Abstract :
The first demonstration of a normally-off 4H-SiC double-gated, vertical junction field-effect transistor (VJFET) with implanted vertical channel without using epitaxial regrowth is reported. With an 11 μm, 1×1016 cm-3 doped drift layer, over 1000 V VJFETs in the normally-off mode have been fabricated with a specific on-resistance of 21.7 mΩ cm2.
Keywords :
ion implantation; junction gate field effect transistors; power field effect transistors; silicon compounds; wide band gap semiconductors; 1050 V; 11 micron; 4H-SiC vertical channel JFET; N ion implantation; SiC:N; VJFETs; doped drift layer; double-gated JFET; high power JFETs; implanted vertical channel; normally-off mode; specific on-resistance; vertical junction field-effect transistor;
Journal_Title :
Electronics Letters
DOI :
10.1049/el:20030104
