• DocumentCode
    1154863
  • Title

    Physics-based modelling and simulation of dual material gate stack (DUMGAS) MOSFET

  • Author

    Saxena, M. ; Haldar, S. ; Gupta, M. ; Gupta, R.S.

  • Author_Institution
    Dept. of Phys. & Electron., Univ. of Delhi, New Delhi, India
  • Volume
    39
  • Issue
    1
  • fYear
    2003
  • Firstpage
    155
  • Lastpage
    157
  • Abstract
    A new structure, dual-material gate stack (DUMGAS)-MOSFET and its 2D analytical model are proposed. The model offers new opportunities for realising future ULSI circuits with the DUMGAS-MOSFET.
  • Keywords
    MOS integrated circuits; MOSFET; ULSI; electron mobility; semiconductor device models; DUMGAS; MOSFET; ULSI; carrier transport efficiency; dual material gate stack; electron velocity; physics-based modelling;
  • fLanguage
    English
  • Journal_Title
    Electronics Letters
  • Publisher
    iet
  • ISSN
    0013-5194
  • Type

    jour

  • DOI
    10.1049/el:20030007
  • Filename
    1182414
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=1154863