DocumentCode :
1155225
Title :
An analytical two-dimensional simulation for the GaAs MESFET drain-induced barrier lowering: a short-channel effect
Author :
Chang, Chian-Sern ; Day, Ding-yuan S. ; Chan, Simon
Author_Institution :
Avantek Inc., Santa Clara, CA, USA
Volume :
37
Issue :
5
fYear :
1990
fDate :
5/1/1990 12:00:00 AM
Firstpage :
1182
Lastpage :
1186
Abstract :
An analytic model for simulating the GaAs MESFET drain-induced barrier lowering and its effect on device performance are discussed. The potential barrier between the source and drain of a field-effect transistor in or near the subthreshold region is lowered by increasing the drain voltage. As the barrier is lowered to be comparable to the thermal energy, an appreciable current will flow through the channel, and the device will begin to conduct. This effect causes the threshold-voltage-control problem and degrades the device performance
Keywords :
III-V semiconductors; Schottky gate field effect transistors; gallium arsenide; semiconductor device models; GaAs; GaAs MESFET; analytical two-dimensional simulation; drain voltage; drain-induced barrier lowering; model; performance degradation; potential barrier; short-channel effect; subthreshold region; threshold-voltage-control problem; Analytical models; Boundary conditions; Buffer layers; FETs; Gallium arsenide; MESFETs; Performance analysis; Poisson equations; Thermal conductivity; Threshold voltage;
fLanguage :
English
Journal_Title :
Electron Devices, IEEE Transactions on
Publisher :
ieee
ISSN :
0018-9383
Type :
jour
DOI :
10.1109/16.108177
Filename :
108177
Link To Document :
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