Title :
A broadband low-noise front-end amplifier for ultra wideband in 0.13-μm CMOS
Author :
Gharpurey, Ranjit
Author_Institution :
Dept. of Electr. Eng. & Comput. Sci., Univ. of Michigan, Ann Arbor, MI, USA
Abstract :
A front-end amplifier for the Ultra Wideband (UWB) system is described. The amplifier has a single-ended input and a differential output, with 16 dB power gain, a flat-gain bandwidth of 2-5.2 GHz, an output 1-dB gain compression point of -8 dBm and a noise figure of 4.7-5.7 dB over the signal bandwidth. The amplifier is implemented in 0.13-μm digital CMOS, occupies 0.4×0.6 mm2, and consumes 38 mW.
Keywords :
CMOS digital integrated circuits; OFDM modulation; distributed amplifiers; wideband amplifiers; 0.13 micron; 16 dB; 2 to 5.2 GHz; 38 mW; 4.7 to 5.7 dB; digital CMOS; gain bandwidth; low noise amplifier; noise figure; power gain; ultra wideband; Bandwidth; Broadband amplifiers; Costs; Coupling circuits; Differential amplifiers; Gain; Low-noise amplifiers; MOS devices; Noise figure; Ultra wideband technology; Broadband; Ultra Wideband (UWB); low-noise amplifier (LNA);
Journal_Title :
Solid-State Circuits, IEEE Journal of
DOI :
10.1109/JSSC.2005.848174
