Characteristics of p-i junction amorphous silicon stripe-type photodiode array and its application to contact image sensor

Author

Hayama, Mashiro

Author_Institution

Mitsubishi Electr. Corp., Hyogo, Japan

Volume

37

Issue

5

fYear

1990

fDate

5/1/1990 12:00:00 AM

Firstpage

1271

Lastpage

1219

Abstract

Various sandwich structures of photodiode arrays using hydrogenated amorphous silicon films fabricated under similar process conditions were compared. As a result of this comparison, the p-i junction amorphous silicon stripe-type photodiode array was studied. This photodiode array has the same excellent sensor performance characteristics for contact image sensors as the p-i-n junction type, and it has a similar process. A contact image sensor using this photodiode array with eight elements/mm resolution and A4 size is discussed. This compact, high performance sensors was applied to GIII facsimiles

Keywords

amorphous semiconductors; elemental semiconductors; facsimile equipment; hydrogen; image sensors; photodiodes; silicon; A4 size; GIII facsimiles; amorphous Si:H; contact image sensor; p-i junction amorphous silicon stripe-type photodiode array; sandwich structures; sensor performance characteristics; Amorphous silicon; Chromium; Glass; Image sensors; Indium tin oxide; Optical films; Optical sensors; PIN photodiodes; Photoconductivity; Sensor arrays;

fLanguage

English

Journal_Title

Electron Devices, IEEE Transactions on

Publisher

ieee

ISSN

0018-9383

Type

jour

DOI

10.1109/16.108189

Filename

108189