2000-A/1-mΩ power MOSFETs in wafer repair technique

Author

Stoisiek, Michael ; Schwarzbauer, Herbert ; Kiffe, Walter ; Theis, Dietmar

Author_Institution

Siemens AG, Munich, West Germany

Volume

37

Issue

5

fYear

1990

fDate

5/1/1990 12:00:00 AM

Firstpage

1397

Lastpage

1401

Abstract

Power MOSFETs with a current capability of up to several thousand amperes and hence an active device area significantly exceeding the typical IC chip size can be realized only if a wafer repair technique is used. A suitable technique has been developed and used to realize circular power MOSFETs with a diameter of 3 cm. The devices are suited to control up to 2000-A drain current and exhibit an on-resistance of R_DS(on)=0.9 mΩ. To contact such a device, a pressure contact system adequate to the high-current value is used. Typical switching times are about 100 ns. Such a large-area MOSFET was used in a MOSFET-GTO (gate turnoff thyristor) cascode circuit to switch anode currents up to 1200 A/1000 V. The total switching time was significantly reduced, and a smaller snubber capacitor could be employed than with the GTO in a conventional circuit

Keywords

insulated gate field effect transistors; power transistors; semiconductor switches; semiconductor technology; 1 mohm; 100 ns; 2000 A; 3 cm; MOSFET GTO cascode circuit; active device area; anode current switching; circular power MOSFETs; current capability; diameter; drain current; on-resistance; pressure contact system; snubber capacitor; switching times; wafer repair technique; Anodes; Contacts; MOS devices; MOSFET circuits; Snubbers; Switches; Switching circuits; Testing; Thyristors; Voltage;

fLanguage

English

Journal_Title

Electron Devices, IEEE Transactions on

Publisher

ieee

ISSN

0018-9383

Type

jour

DOI

10.1109/16.108203

Filename

108203