Title :
Second-order intermodulation mechanisms in CMOS downconverters
Author :
Manstretta, Danilo ; Brandolini, Massimo ; Svelto, Francesco
Author_Institution :
Agere Syst., Berkeley Heights, NJ, USA
fDate :
3/1/2003 12:00:00 AM
Abstract :
An in-depth analysis of the mechanisms responsible for second-order intermodulation distortion in CMOS active downconverters is proposed in this paper. The achievable second-order input intercept point (IIP2) has a fundamental limit due to nonlinearity and mismatches in the switching stage and improves with technology scaling. Second-order intermodulation products generated by the input transconductor or due to self-mixing usually contribute to determine the IIP2 even though they can, at least in principle, be eliminated. The parasitic capacitance loading the switching-stage common source plays a key role in the intermodulation mechanisms. Moreover, the paper shows that, besides direct conversion and low intermediate frequency (IF), even superheterodyne receivers can suffer from second-order intermodulation if the IF is not carefully chosen. The test vehicle to validate the proposed analysis is a highly linear 0.18-μm direct-conversion CMOS mixer, embedded in a fully integrated receiver, realized for Universal Mobile Telecommunications System applications.
Keywords :
CMOS analogue integrated circuits; frequency convertors; intermodulation distortion; mixers (circuits); 0.18 micron; CMOS active downconverter; UMTS; direct conversion architecture; fully-integrated wireless receiver; linear direct-conversion CMOS mixer; low intermediate frequency architecture; parasitic capacitance; second-order input intercept point; second-order intermodulation distortion; self-mixing; superheterodyne receiver; switching-pair mismatch; switching-stage common source; transconductor nonlinearity; 3G mobile communication; Bandwidth; CMOS technology; Frequency conversion; Intermodulation distortion; Mixers; Parasitic capacitance; Radio frequency; Receivers; Transconductors;
Journal_Title :
Solid-State Circuits, IEEE Journal of
DOI :
10.1109/JSSC.2002.808310